Prof. Fukui received his BS and MS degrees in applied physics and Ph.D. degree in engineering from Hokkaido University, Sapporo, Japan in 1973, 1975 and 1983 respectively.

From 1975-91 Prof. Fukui was with NTT Basic Research Laboratories, Musashino, Tokyo. He was actively involved in the crystal growth of III-V compound semiconductor materials, especially for quantum structures. He was a pioneer in the formation of GaAs/InAs monolayer superlattices, GaAs quantum wires and quantum dots by metalorganic chemical vapor deposition.

In 1991, Prof. Fukui joined the Research Center for Interface Quantum Electronics (from 2001, Research Center for Integrated Quantum Electronics), Hokkaido University as Professor. His area of research encompasses the formation of quantum nanostructures and their application. He was instrumental in developing the MOVPE growth facility. By his extensive research he was successful in forming the InGaAs quantum wire lasers, GaAs single electron transistors and their logic circuits.  His research interest also includes studies of optical and transport properties of GaAs and InAs quantum dots and related structures.

As a pioneer in the research area of quantum nanostructure formation, he has been invited worldwide to present research results and to organize and/or chair sessions in several international conferences. He has more than 160 publications in scientific journals to his credit and his papers have been cited more than 2200 times in other journal articles. He was a member of the editorial board of Japanese Journal of Applied Physics from 1993 to 2000. He is an active member of the American Physical Society, the Physical Society of Japan, the Japanese Association for Crystal Growth and of several other scientific and professional associations.

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